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On January 4th, US time, II-VI, a leader in engineering materials and communication devices, announced a breakthrough in silicon thin film diamond technology for 5G wireless communications. The result is with the University of South Florida (USF). Obtained in the joint study. Nowadays, mobile communication equipment vendors are planning to use 5G wireless technology to improve their high-speed broadband services. The demand for large bandwidth and high-power devices will be more urgent than the performance of existing technologies. The first phase of the project was completed by II-VI and USF. The research project was first launched in June 2016 with the aim of developing a new technology platform using silicon thin film diamond technology to enable next-generation high-speed electronic devices. Can be used in 5G mobile phones. Dr. Wen-Qing Xu, General Manager of Platform Technology Development Incubation Division of II-VI Company, said: "Although II-VI is a leader in engineering materials and communication film technology, our cooperation with USF will accelerate technological innovation and help us. Before the outbreak of the 5G wireless device market, it is fully prepared.†It is understood that the cooperation between II-VI and USF has received support from the MGRP of the Florida High-tech Channel Committee. The research will focus on the characteristics of the prototype device and device design, modeling and manufacture. Dr. Jing Wang, an associate professor at the Florida Institute of Electrical Engineering, said: "Through this collaborative research, USF's research team can improve its expertise in MEMS thin film diamonds and provide rapid technical solutions to II-VI. Project support is also one of more than a dozen projects in recent years.†For II-VI, the new silicon thin film diamond technology platform will complement the company's portfolio of GaAs and SiC engineering materials for high-speed wireless applications.