(a) Schematic diagram of the operation principle of the transistor without gate friction electronics. (b) Physical map of gateless flexible triboelectric transistor for magnetic flux sensing. (c) Schematic diagram of the principle of magnetic force sensing. (d) Changes in source and drain current at different pressures. (e) Changes in source and drain current at different magnetic field strengths. (f) The finger presses the sensor to control the brightness of the LED light to demonstrate pressure sensing. (g) The magnet proximity sensor controls the intensity of the LED light to demonstrate magnetic field strength sensing.

In recent years, the rapid development of mobile Internet and smart terminals has stimulated the research of smart sensor technologies in human-computer interaction, artificial intelligence and wearable devices. At the same time, field effect transistors are widely used in electronic devices, human-computer interaction, and health monitoring because of their low cost and large-scale features. However, the conventional field effect transistor needs to use the gate electrode to access the electrical signal for sensing and control. The preparation process of the gate electrode is complex and easily damaged, which limits the development of the wearable smart device to some extent.

In 2014, the research group headed by Wang Zhonglin, chief scientist of the Chinese Academy of Sciences Beijing Institute of Nano-Energy and System Research and Wang Zhonglin, a researcher at the Institute of Nano Energy and Systems, Chinese Academy of Sciences, for the first time proposed a new research area of ​​triboelectrics, using the electrostatic potential generated by friction as a gate signal. To regulate the characteristics of electrical transmission and conversion in semiconductors, which can be used for information sensing and active control, and implement various human-computer interactive functional devices, such as electromechanical coupling logic circuits, touch-type electroluminescence, contact-type electromechanical storage, Enhanced photoelectric conversion, smart touch switch, active haptic imaging system, electronic skin, flexible transparent transistors. In recent years, friction electronics has received extensive attention and follow-up research by scholars at home and abroad, and has become a research hotspot in the field of flexible electronics.

Recently, the research team teamed with Dong Guifang, an associate professor of the Department of Chemistry of Tsinghua University, to jointly develop a flexible organic triboelectric transistor without a gate electrode. The researchers used a removable friction layer to directly contact the dielectric layer to achieve power and current control of the transistor. The device can be used to sense tactile pressure and magnetic field strength, achieving 21% Pa-1 and 16%. The sensitivity of mT-1, as well as response time better than 120ms, has good stability and durability. The device based on the dielectric layer and the external direct contact electrification instead of the traditional gate voltage sensing mechanism, can effectively simplify the preparation process of the gate electrode in the transistor, to avoid damage to the gate electrode due to device bending, increase its stability as a sensor With durability, it has established a direct interaction mechanism with external environmental stimuli and has broad application prospects in human-machine interface, electronic skin, wearable electronic devices, and smart sensing.

Related research results were published on the ACS Nano.

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